| PART |
Description |
Maker |
| BC461-5 SEMELABLTD-BC461-5E1 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-5
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD
Seme LAB
|
| DXT2012P5 DXT2012P5-13 DXT2012P5-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
60V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| MMJT9435T1 MMJT9435T1G MMJT9435T3 MMJT9435T3G MMJT |
PNP Bipolar Power Transistor
Bipolar Power Transistors PNP Silicon
|
ONSEMI[ON Semiconductor]
|
| MJL3281A MJL1302A |
Complementary NPN-PNP Silicon Power Bipolar Transistor
Power 15A 200V PNP
|
ON Semiconductor
|
| 2N4399 |
PNP Silicon High-Power Transistor(60V（集电极-发射极）硅PNP大功率晶体管) 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| MJ8100 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-205AD
|
TT electronics Semelab, Ltd.
Seme LAB
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
| 2SB1393 2SB1393A 2SB1392C |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220FN 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 4A条一（c）|20FN
Silicon PNP epitaxial planar type(For power amplification)
|
Littelfuse, Inc.
Panasonic Semiconductor
|
| CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
| ZXTP25060BFHTA ZXTP25060BFH |
60V, SOT23, PNP medium power transistor
|
ZETEX[Zetex Semiconductors]
|
| 2SB0929/2SB0929A2SB929/2SB929A 2SB09292SB929 2SB09 |
2SB0929. 2SB0929A (2SB929. 2SB929A) - PNP Transistor
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Power Device - Power Transistors - General-Purpose power amplification
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-262VAR 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）|62VAR
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
|
TE Connectivity, Ltd.
|
| ZXTP2012G-16 |
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR
|
Diodes Incorporated
|
